| PART |
Description |
Maker |
| CY27H010-30ZC CY27H010-35JC CY27H010-35WMB CY27H01 |
128K x 8 High-Speed CMOS EPROM
128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 35 ns, PQCC32
128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 35 ns, PDSO32
128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 30 ns, PDIP32
128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 30 ns, PQCC32
From old datasheet system
|
Cypress Semiconductor, Corp.
Atmel, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| KM681001A KM681001A-15 KM681001A-20 |
128K x 8 Bit High-Speed CMOS Static RAM
128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.
From old datasheet system
|
http://
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| 29C010PI-1 29C010PI-2 29C010PI-3 29C010JC-1 29C010 |
High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed 150 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed 200 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns.
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns.
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns.
|
Turbo IC
|
| LY61L12816AML-10IT LY61L12816AML-10T |
128K X 16 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| LP61L1024S-12 LP61L1024X-12 LP61L1024V-12 LP61L102 |
128K X 8 BIT 3.3V HIGH SPEED LOW VCC CMOS SRAM 128K的8.3V的高速低虚拟通道连接CMOS SRAM
128K X 8 BIT 3.3V HIGH SPEED LOW VCC CMOS SRAM 128K的83.3V的高速低虚拟通道连接CMOS SRAM
|
AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
|
| IDT70V3319S133PRFI IDT70V3399S166PRFI IDT70V3319S1 |
HIGH-SPEED 3.3V 256/128K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 3.3V56/128K × 18 SYNCHRONOU S双，端口静态RAM.5V的接
HIGH-SPEED 3.3V 256/128K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 18 DUAL-PORT SRAM, 15 ns, PQFP128
|
Integrated Device Technology, Inc.
|
| W24010A |
128K×8 High-Speed CMOS Static RAM(128K×8位高速CMOS静态RAM) 8 × 128K的高速CMOS静态RAM28K的8位高速的CMOS静态RAM）的
|
Winbond Electronics, Corp.
|
| AS7C31025A-20TJI AS7C1025A AS7C1025A-10JC AS7C1025 |
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time
5V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 10 ns, PDSO32
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 20 ns, PDSO32
High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125
Parallel-Load 8-Bit Shift Registers 16-VQFN -40 to 85
Parallel-Load 8-Bit Shift Registers 16-SO -40 to 85
High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125
High Speed CMOS Logic Quad 2-Input AND Gates 14-TSSOP -55 to 125
Parallel-Load 8-Bit Shift Registers 16-SOIC -40 to 85
Parallel-Load 8-Bit Shift Registers 16-TSSOP -40 to 85
5V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time
5V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time
|
Alliance Semiconductor ...
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| IDT70V639S10BFI IDT70V639S15BF IDT70V639S12BFI IDT |
HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM 高.3 128K的18 ASYNCHRONO美国双端口静态RAM
HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM 128K X 18 DUAL-PORT SRAM, 15 ns, PBGA208
HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM 128K X 18 DUAL-PORT SRAM, 12 ns, PBGA208
HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM 128K X 18 DUAL-PORT SRAM, 12 ns, PQFP128
|
Integrated Device Technology, Inc.
|
| CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit）（4分位，写延迟LVTTL高速同步静态随机存储器28K的36位）
4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发（HSTL）、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速（128K的x 36Bit）（4分位，写延迟，高速逻辑收发（HSTL），高速同步静态随机存储器28K的36位）同步静态存储器
|
Sony, Corp.
|
| AS7C1024B AS7C1024BV1.2 AS7C1024B-20TJIN AS7C1024B |
From old datasheet system
SRAM - 5V Fast Asynchronous
High Speed CMOS Logic Hex Inverters 14-SOIC -55 to 125
High Speed CMOS Logic Quad 2-Input NAND Gates with Open Drain 14-PDIP -55 to 125
High Speed CMOS Logic Quad 2-Input NOR Gates 14-SOIC -55 to 125 128K X 8 STANDARD SRAM, 15 ns, PDSO32
5V 128K X 8 CMOS SRAM 128K X 8 STANDARD SRAM, 20 ns, PDSO32
5V 128K X 8 CMOS SRAM 128K X 8 STANDARD SRAM, 10 ns, PDSO32
High Speed CMOS Logic Quad 2-Input NAND Gates with Open Drain 14-SOIC -55 to 125 128K X 8 STANDARD SRAM, 20 ns, PDSO32
High Speed CMOS Logic Quad 2-Input NOR Gates 14-SOIC -55 to 125 128K X 8 STANDARD SRAM, 12 ns, PDSO32
High Speed CMOS Logic Quad 2-Input NOR Gates 14-PDIP -55 to 125
|
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
